Minority carrier lifetime improvement in p-type silicon by oxygen related centers gettering at low temperatures: application to the interojunction solar cell processing

Ulyashin, A.A.UlyashinBilyalov, RenatRenatBilyalovBrück, A.A.BrückScherff, M.M.ScherffJob, R.R.JobFahrner, W.W.FahrnerPoortmans, JefJefPoortmans2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8238Minority carrier lifetime improvement in p-type silicon by oxygen related centers gettering at low temperatures: application to the interojunction solar cell processingProceedings paper