Irradiation induced lattice defects in Si1-xGex epitaxial devices

Ohyama, HidenoriHidenoriOhyamaVanhellemont, JanJanVanhellemontTakami, Y.Y.TakamiHayama, KiyoteruKiyoteruHayamaKudo, T.T.KudoHakata, T.T.HakataKobayashi, K.K.KobayashiSunaga, H.H.SunagaPoortmans, JefJefPoortmansCaymax, MattyMattyCaymax2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/795Irradiation induced lattice defects in Si1-xGex epitaxial devicesProceedings paper