Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

Martens, KoenKoenMartensMitard, JeromeJeromeMitardDe Jaeger, BriceBriceDe JaegerMeuris, MarcMarcMeurisMaes, HermanHermanMaesGroeseneken, GuidoGuidoGroesenekenMinucci, F.F.MinucciCrupi, FeliceFeliceCrupi2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14132Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETsProceedings paper