1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Kumar, SujitSujitKumarGeens, KarenKarenGeensVohra, AnuragAnuragVohraWellekens, DirkDirkWellekensCingu, DeepthiDeepthiCinguFabris, ElenaElenaFabrisCosnier, ThibaultThibaultCosnierHahn, H.H.HahnBakeroot, BenoitBenoitBakerootPosthuma, NielsNielsPosthumaLanger, RobertRobertLangerDecoutere, StefaanStefaanDecoutere2024-11-072024-07-112024-11-0720240741-3106WOS:001194155100052https://imec-publications.be/handle/20.500.12860/441461.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered SubstratesJournal article10.1109/LED.2024.3361164WOS:001194155100052