Voltage- and temperature-dependent reliability of the set/reset switching in TiN/HfO2/Pt resistive RAM

Chen, YangyinYangyinChenGoux, LudovicLudovicGouxPantisano, LuigiLuigiPantisanoWang, XinPengXinPengWangDegraeve, RobinRobinDegraeveGovoreanu, BogdanBogdanGovoreanuJurczak, GosiaGosiaJurczakWouters, DirkDirkWoutersAltimime, LaithLaithAltimimeGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010-12https://imec-publications.be/handle/20.500.12860/16851Voltage- and temperature-dependent reliability of the set/reset switching in TiN/HfO2/Pt resistive RAMProceedings paper