Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS

Lin, DennisDennisLinWaldron, NiamhNiamhWaldronBrammertz, GuyGuyBrammertzMartens, KoenKoenMartensWang, Wei-EWei-EWangSioncke, SonjaSonjaSionckeDelabie, AnneliesAnneliesDelabieBender, HugoHugoBenderConard, ThierryThierryConardTseng, W.H.W.H.TsengLin, S.C.S.C.LinTemst, K.K.TemstVantomme, AndreAndreVantommeMitard, JeromeJeromeMitardCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17499Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOSProceedings paper