Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs

Mukherjee, KalparupaKalparupaMukherjeeDe Santi, CarloCarloDe SantiBuffolo, MatteoMatteoBuffoloBorga, MatteoMatteoBorgaYou, ShuzhenShuzhenYouGeens, KarenKarenGeensMeneghini, MatteoMatteoMeneghiniBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereGerosa, AndreaAndreaGerosaMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2022-02-182022-02-1820212072-666XWOS:000643317700001https://imec-publications.be/handle/20.500.12860/38885Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETsJournal article10.3390/mi12040445WOS:000643317700001MEDLINE:33923422