Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeysLukyanchikova, N.N.LukyanchikovaGarbar, N.N.Garbar2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9602Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETsJournal article