25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

Verheyen, PeterPeterVerheyenCollaert, NadineNadineCollaertRooyackers, RitaRitaRooyackersLoo, RogerRogerLooShamiryan, DenisDenisShamiryanDe Keersgieter, AnAnDe KeersgieterEneman, GeertGeertEnemanLeys, FrederikFrederikLeysDixit, AbhisekAbhisekDixitGoodwin, MichaelMichaelGoodwinYim, Yong SikYong SikYimCaymax, MattyMattyCaymaxDe Meyer, KristinKristinDe MeyerAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/1150825% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regionsProceedings paper