On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Goux, LudovicLudovicGouxRaghavan, NagaNagaRaghavanFantini, AndreaAndreaFantiniNigon, RobinRobinNigonStrangio, SebastianoSebastianoStrangioDegraeve, RobinRobinDegraeveKar, Gouri SankarGouri SankarKarChen, YangyinYangyinChenDe Stefano, FrancescaFrancescaDe StefanoAfanasiev, ValeriValeriAfanasievJurczak, GosiaGosiaJurczak2021-10-222021-10-2220140021-8979https://imec-publications.be/handle/20.500.12860/23872On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regimeJournal articlehttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896841