Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Muller, ChristopheChristopheMullerDeleruyelle, DamienDamienDeleruyelleMuller, RobertRobertMullerThomas, MarylineMarylineThomasDemolliens, AntoineAntoineDemolliensTurquat, ChristianChristianTurquatSpiga, SabinaSabinaSpiga2021-10-192021-10-1920110038-1101https://imec-publications.be/handle/20.500.12860/19457Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layerJournal articlehttp://dx.doi.org/10.1016/j.sse.2010.10.006