On the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noise

Simoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoHiguchi, YuichiYuichiHiguchiHoriguchi, NaotoNaotoHoriguchiClaeys, CorCorClaeys2021-10-212021-10-2120130018-9383https://imec-publications.be/handle/20.500.12860/23091On the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noiseJournal article