TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

Vasilev, AlexanderAlexanderVasilevJech, MarkusMarkusJechGrill, AlexanderAlexanderGrillRzepa, GerhardGerhardRzepaSchleich, ChristianChristianSchleichTyaginov, StanislavStanislavTyaginovMakarov, AlexanderAlexanderMakarovPobegen, GregorGregorPobegenGrasser, TiborTiborGrasserWaltl, MichaelMichaelWaltl2022-06-282022-05-192022-05-302022-06-282022-04-190018-9383WOS:000785740700001https://imec-publications.be/handle/20.500.12860/39843TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETsJournal article10.1109/TED.2022.3166123WOS:000785740700001