Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

Molle, A.A.MolleBaldovino, S.S.BaldovinoLamagna, L.L.LamagnaSpiga, S.S.SpigaLamperti, A.A.LampertiFanciulli, M.M.FanciulliTsoutsou, D.D.TsoutsouGolias, E.E.Goliasdimoulas, A.A.dimoulasBrammertz, GuyGuyBrammertzMerckling, ClementClementMercklingCaymax, MattyMattyCaymax2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19447Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layersProceedings paper