Lateral versus interdigitated diode design for 10 Gb/s Low-voltage low-loss silicon ring modulators

Pantouvaki, MariannaMariannaPantouvakiYu, HuiHuiYuVerheyen, PeterPeterVerheyenLepage, GuyGuyLepageBogaerts, WimWimBogaertsMoelants, MyriamMyriamMoelantsWouters, Johan M. D.Johan M. D.WoutersRadisic, DunjaDunjaRadisicVandervorst, AlainAlainVandervorstAbsil, PhilippePhilippeAbsilVan Campenhout, JorisJorisVan Campenhout2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21253Lateral versus interdigitated diode design for 10 Gb/s Low-voltage low-loss silicon ring modulatorsProceedings paper