Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime

Raghavan, NagarajanNagarajanRaghavanPey, Kin LeongKin LeongPeyLi, XiangXiangLiLiu, WenhuWenhuLiuWu, XingXingWuBosman, MichelMichelBosmanKauerauf, ThomasThomasKauerauf2021-10-192021-10-1920110741-3106https://imec-publications.be/handle/20.500.12860/19647Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regimeJournal article