Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization

Cavaco, CelsoCelsoCavacoPeng, LanLanPengLavizzari, SimoneSimoneLavizzariClaes, JesseJesseClaesVan Hoovels, NeleNeleVan HoovelsGuerrieri, StefanoStefanoGuerrieriSabuncuoglu Tezcan, DenizDenizSabuncuoglu TezcanOsman, HarisHarisOsman2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26398Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterizationProceedings paperhttp://ecst.ecsdl.org/content/75/7/43.full.pdf+html