Device breakdown optimization of Al2O3/GaN E-mode MISFETs

Kang, XuanwuXuanwuKangWellekens, DirkDirkWellekensVan Hove, MarleenMarleenVan HoveDe Jaeger, BriceBriceDe JaegerRonchi, NicoloNicoloRonchiWu, Tian-LiTian-LiWuYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootHu, JieJieHuMarcon, DenisDenisMarconStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26800Device breakdown optimization of Al2O3/GaN E-mode MISFETsProceedings paperMISFETs http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7574589