Gate voltage influence on the channel hot-carrier degradation of high-k-based devices

Amat, EsteveEsteveAmatKauerauf, ThomasThomasKaueraufDegraeve, RobinRobinDegraeveRodríguez, RosanaRosanaRodríguezNafria, MontseMontseNafriaAymerich, XavierXavierAymerichGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-1920111530-4388https://imec-publications.be/handle/20.500.12860/18477Gate voltage influence on the channel hot-carrier degradation of high-k-based devicesJournal article