On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate

Ogier, Jean-LucJean-LucOgierDegraeve, RobinRobinDegraeveGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1380On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gateProceedings paper