Atomic layer deposition of ruthenium at 100°C using the RuO4-precursor and H2

Minjauw, MatthiasMatthiasMinjauwDendooven, JolienJolienDendoovenCapon, BorisBorisCaponSchaekers, MarcMarcSchaekersDetavernier, ChristopheChristopheDetavernier2021-10-222021-10-2220152050-7526https://imec-publications.be/handle/20.500.12860/25647Atomic layer deposition of ruthenium at 100°C using the RuO4-precursor and H2Journal articlehttp://pubs.rsc.org/en/content/articlelanding/2015/tc/c4tc01961j#!divAbstract