RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS

Pantisano, LuigiLuigiPantisanoSchreurs, DominiqueDominiqueSchreursKaczer, BenBenKaczerJeamsaksiri, WutthinanWutthinanJeamsaksiriVenegas, RafaelRafaelVenegasDegraeve, RobinRobinDegraeveCheung, K.P.K.P.CheungGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152003-12https://imec-publications.be/handle/20.500.12860/7971RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOSProceedings paper