Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Stockman, ArnoArnoStockmanCanato, EleonoraEleonoraCanatoMeneghini, MatteoMatteoMeneghiniMeneghesso, GaudenzioGaudenzioMeneghessoMoens, PeterPeterMoensBakeroot, BenoitBenoitBakeroot2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/34071Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTsProceedings paperhttps://ieeexplore.ieee.org/document/8757667