Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack

Autran, J.L.J.L.AutranMunteanu, D.D.MunteanuHoussa, MichelMichelHoussaBescond, M.M.BescondGarros, X.X.GarrosLeroux, C.C.Leroux2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8502Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stackProceedings paper