Magchiels, G.G.MagchielsDeduytsche, D.D.DeduytscheKotsedi, L.L.KotsediLoo, RogerRogerLooMtshali, C. B.C. B.MtshaliSegola, I. K.I. K.SegolaSpettel, N.N.Spettelvan Stiphout, K.K.van StiphoutVohra, AnuragAnuragVohraDetavernier, C.C.DetavernierVantomme, A.A.Vantomme2026-02-122026-02-122025-10-011359-6454https://imec-publications.be/handle/20.500.12860/58785In the pursuit of high-quality contact materials for (opto)electronic devices, replacing Ni with Pt is explored to offer a path towards more stable (stano)germanide contacts. In this study, we resolve the complex sequence of Pt (stano)germanide phase formation through real-time probing of the elemental redistribution using Rutherford backscattering spectrometry, complemented with X-ray diffraction, and the use of artificial neural networks. The existence of the Pt(Ge(Sn)) phase is confirmed, forming simultaneously with PtGe(Sn). Both Pt/Ge and Pt/GeSn systems follow the same phase sequence; however, the Pt/Ge system exhibits superior thermal stability of the monogermanide and the Ge-rich phases throughout an extended temperature range, as well as better morphological stability up to 600 °C, attributed to nucleation-controlled growth of the Ge-rich phases. The metastable incorporation of 7.5% Sn in Ge modifies the thermodynamic and kinetic behavior of Pt stanogermanide formation, as observed by the reduced compositional and morphological stability at elevated temperatures.engJournal article10.1016/j.actamat.2025.121580WOS:001588380300001PHASE-FORMATIONPLATINUMBEHAVIORNICKELFILMSNISI