Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs

Veloso, AnabelaAnabelaVelosoKottantharayil, AnilAnilKottantharayilWitters, LiesbethLiesbethWittersBrus, StephanStephanBrusKubicek, StefanStefanKubicekde Marneffe, Jean-FrancoisJean-Francoisde MarneffeSijmus, BramBramSijmusDevriendt, KatiaKatiaDevriendtLauwers, AnneAnneLauwersKauerauf, ThomasThomasKaueraufJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9847Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETsProceedings paper