Gate-dielectric interface effects in low frequency (1/f) noise in p-MOSFETs with high-K dielectrics

Srinivasan, PurushothamanPurushothamanSrinivasanSimoen, EddyEddySimoenSinganamalla, RaghunathRaghunathSinganamallaYu, HongYuHongYuYuClaeys, CorCorClaeysMisra, D.D.Misra2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11265Gate-dielectric interface effects in low frequency (1/f) noise in p-MOSFETs with high-K dielectricsProceedings paper