Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress

Gupta, AnshulAnshulGuptaGupta, CharuCharuGuptaVeloso, AnabelaAnabelaVelosoParvais, BertrandBertrandParvaisDixit, AbhisekAbhisekDixit2023-08-042023-06-202023-08-0420210018-9383WOS:000652799800007https://imec-publications.be/handle/20.500.12860/42001Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier StressJournal article10.1109/TED.2021.3075169WOS:000652799800007DEGRADATIONIMPACTRELIABILITYINTERFACEFINFETS