Delie, GillesGillesDelieDecoster, StefanStefanDecosterWu, ChenChenWuRenaud, VincentVincentRenaudMarti, GiulioGiulioMartiKundu, SouvikSouvikKunduHermans, YannickYannickHermansUlu Okudur, FulyaFulyaUlu OkudurKenens, BartBartKenensHeylen, NancyNancyHeylenMurdoch, GayleGayleMurdochPark, SeonghoSeonghoParkTokei, ZsoltZsoltTokei2026-03-302026-03-302025979-8-3315-3782-12380-632Xhttps://imec-publications.be/handle/20.500.12860/58961This work presents the integration of MP16/18 in a spacer-is-dielectric SADP Ru semi-damascene integration scheme through a novel SiN-based core and gap hard mask integration flow. This approach lowers the cost of single metal layer processing by 60% compared to a metal-based core approach. It also enables more than 80% yield on MP18 lines and the first ever reported electrical measurements of MP16 line structures in literature achieving 40% yield across a 300mm wafer, with an average resistance of 524 Ω/µm (MP18) and 656 Ω/µm (MP16). MP18 leakage structures show a low line-to-line leakage at 1.2V achieving 80% yield with a breakdown voltage in the range of 8-11V.engProceedings paper10.1109/IITC66087.2025.11075372WOS:001554227600022