Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes

Czerwinski, A.A.CzerwinskiSimoen, EddyEddySimoenVanhellemont, JanJanVanhellemontTomaszewski, D.D.TomaszewskiGibki, J.J.GibkiBakowski, A.A.Bakowski2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1787Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodesProceedings paper