InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behavior

Alian, AliRezaAliRezaAlianMerckling, ClementClementMercklingBrammertz, GuyGuyBrammertzMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeynsHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16642InGaAs channel IFQW-MOSFET: Effect of InAlAs interfacial passivation layer and (NH4)2S treatment on the electrical behaviorProceedings paper