Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

Derluyn, JoffJoffDerluynVan Hove, MarleenMarleenVan HoveVisalli, DomenicaDomenicaVisalliLorenz, AnneAnneLorenzMarcon, DenisDenisMarconSrivastava, PuneetPuneetSrivastavaGeens, KarenKarenGeensSijmus, BramBramSijmusViaene, JohnJohnViaeneKang, XuanwuXuanwuKangDas, JoJoDasMedjdoub, FaridFaridMedjdoubCheng, KaiKaiChengDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysBorghs, GustaafGustaafBorghsGermain, MarianneMarianneGermain2021-10-172021-10-172009-12https://imec-publications.be/handle/20.500.12860/15228Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4Proceedings paper