Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H-SiC epitaxial layers

Calabretta, C.C.CalabrettaPecora, A.A.PecoraAgati, MartaMartaAgatiMuoio, A.A.MuoioScuderi, V.V.ScuderiPrivitera, S.S.PriviteraReitano, R.R.ReitanoBoninelli, S.S.BoninelliLa Via, F.F.La Via2025-03-242024-03-262025-03-2420241369-8001WOS:001180458100001https://imec-publications.be/handle/20.500.12860/43733Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H-SiC epitaxial layersJournal article10.1016/j.mssp.2024.108175WOS:001180458100001SILICON-CARBIDEALTECHNOLOGYPHOSPHORUS