Reliable gate-voltage-dependent channel-length and series resistance extraction technique taking into account threshold voltage reduction in MOSFETs

Biesemans, SergeSergeBiesemansKubicek, StefanStefanKubicekDe Meyer, KristinKristinDe Meyer2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/527Reliable gate-voltage-dependent channel-length and series resistance extraction technique taking into account threshold voltage reduction in MOSFETsProceedings paper