Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.

Blomme, PieterPieterBlommeHaspeslagh, LucLucHaspeslaghDe Vos, JoeriJoeriDe VosLorenzini, MartinoMartinoLorenziniVan Houdt, JanJanVan HoudtDe Meyer, KristinKristinDe Meyer2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8594Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.Oral presentation