On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerToledano Luque, MariaMariaToledano LuqueRoussel, PhilippePhilippeRousselHehenberger, PhilipPhilipHehenbergerGrasser, TiborTiborGrasserMitard, JeromeJeromeMitardEneman, GeertGeertEnemanWitters, LiesbethLiesbethWittersHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/18927On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETsJournal article