Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

Witters, LiesbethLiesbethWittersArimura, HiroakiHiroakiArimuraSebaai, FaridFaridSebaaiHikavyy, AndriyAndriyHikavyyMilenin, AlexeyAlexeyMileninLoo, RogerRogerLooDe Keersgieter, AnAnDe KeersgieterEneman, GeertGeertEnemanSchram, TomTomSchramWostyn, KurtKurtWostynDevriendt, KatiaKatiaDevriendtSchulze, AndreasAndreasSchulzeLieten, RubenRubenLietenBilodeau, SSBilodeauCooper, EECooperStorck, PeterPeterStorckChiu, EddyEddyChiuVrancken, ChristaChristaVranckenFavia, PaolaPaolaFaviaVancoille, EricEricVancoilleMitard, JeromeJeromeMitardLanger, RobertRobertLangerOpdebeeck, AnnAnnOpdebeeckHolsteyns, FrankFrankHolsteynsWaldron, NiamhNiamhWaldronBarla, KathyKathyBarlaDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-242021-10-2420170018-9383https://imec-publications.be/handle/20.500.12860/29944Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate depositionJournal articlehttp://ieeexplore.ieee.org/document/8061030/