Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

Wang, X.P.X.P.WangYu, HongYuHongYuYuLi, M.FM.FLiZhu, C.X.C.X.ZhuBiesemans, SergeSergeBiesemansChin, A.A.ChinSun, Y.Y.SunFeng, Y.Y.FengLim, A.A.LimYeo, Y.C.Y.C.YeoLoh, W.Y.W.Y.LohLo, G.Q.G.Q.LoKwong, D.LD.LKwong2021-10-162021-10-162007-04https://imec-publications.be/handle/20.500.12860/13215Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectricsJournal article