Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Huang, QiangshengQiangshengHuangWu, YingchenYingchenWuMa, KeqiKeqiMaZhang, JianhaoJianhaoZhangXie, WeiqiangWeiqiangXieFu, XinXinFuShi, YaochengYaochengShiChen, KaixuanKaixuanChenHe, Jian-JunJian-JunHeVan Thourhout, DriesDriesVan ThourhoutRoelkens, GuntherGuntherRoelkensLiu, LiuLiuLiuHe, SailingSailingHe2021-10-232021-10-232016-040003-6951https://imec-publications.be/handle/20.500.12860/26753Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulatorJournal articlehttp://scitation.aip.org/content/aip/journal/apl/108/14/10.1063/1.4945666