Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility

Kwon, DaeSeonDaeSeonKwonBizindavyi, JasperJasperBizindavyiParida, Pradyumna KumarPradyumna KumarParidaDe, GourabGourabDeKim, Hyun-CheolHyun-CheolKimRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaBelmonte, AttilioAttilioBelmonteDelabie, AnneliesAnneliesDelabieNyns, LauraLauraNynsKar, Gouri SankarGouri SankarKarVan Houdt, JanJanVan HoudtPopovici, Mihaela IoanaMihaela IoanaPopovici2025-12-192025-12-1920260169-4332https://imec-publications.be/handle/20.500.12860/58602engSeed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibilityJournal article10.1016/j.apsusc.2025.164786WOS:001592434900013METASTABLE FERROELECTRIC PHASETHIN-FILMSCAPACITORSCHEMISTRYENDURANCE