High Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial Ge

Souriau, LaurentLaurentSouriauTerzieva, ValentinaValentinaTerzievaVandervorst, WilfriedWilfriedVandervorstClemente, FrancescaFrancescaClementeBrijs, BertBertBrijsMoussa, AlainAlainMoussaMeuris, MarcMarcMeurisLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-172021-10-1720080040-6090https://imec-publications.be/handle/20.500.12860/14506High Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial GeJournal article