Direct tunneling into the gate dielectric by both holes and electrons in an ambipolar organic memory transistor

Debucquoy, MaartenMaartenDebucquoyRockele, MaartenMaartenRockeleGenoe, JanJanGenoeGelinck, GerwinGerwinGelinckHeremans, PaulPaulHeremans2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15200Direct tunneling into the gate dielectric by both holes and electrons in an ambipolar organic memory transistorMeeting abstract