Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain

Hellings, GeertGeertHellingsMitard, JeromeJeromeMitardKrom, RaymondRaymondKromWitters, LiesbethLiesbethWittersEneman, GeertGeertEnemanHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooBender, HugoHugoBenderHoffmann, Thomas Y.Thomas Y.HoffmannDe Meyer, KristinKristinDe Meyer2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19058Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drainProceedings paper