Gupta, SomyaSomyaGuptaVincent, BenjaminBenjaminVincentYang, B.B.YangLin, DennisDennisLinGencarelli, FedericaFedericaGencarelliLin, J.-Y. J.J.-Y. J.LinChen, R.R.ChenRichard, OlivierOlivierRichardBender, HugoHugoBenderMagyari-Koepe, B.B.Magyari-KoepeCaymax, MattyMattyCaymaxDekoster, JohanJohanDekosterNishi, Y.Y.NishiSaraswat, K. C.K. C.Saraswat2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20766Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation methodProceedings paper