Study of deposition behavior of thermal/plasma-enhanced chemical vapor deposition (CVD/PECVD) of manganese on porous SiCOH low-k dielectric materials for copper diffusion barrier application in advanced interconnect technology

Jourdan, NicolasNicolasJourdanBaklanov, MikhaïlMikhaïlBaklanovMeersschaut, JohanJohanMeersschautVereecke, GuyGuyVereeckeConard, ThierryThierryConardWilson, ChrisChrisWilsonAblett, JamesJamesAblettFonda, EmilianoEmilianoFondaGeypen, JefJefGeypenSiew, Yong KongYong KongSiewVan Elshocht, SvenSvenVan ElshochtTokei, ZsoltZsoltTokei2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20879Study of deposition behavior of thermal/plasma-enhanced chemical vapor deposition (CVD/PECVD) of manganese on porous SiCOH low-k dielectric materials for copper diffusion barrier application in advanced interconnect technologyMeeting abstract