Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation

Janssens, KoenraadKoenraadJanssensVan Der Biest, O.O.Van Der BiestVanhellemont, JanJanVanhellemontMaes, HermanHermanMaesHull, R.R.Hull2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/691Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretationJournal article