Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

Marcon, DenisDenisMarconVan Hove, MarleenMarleenVan HoveVisalli, DomenicaDomenicaVisalliDerluyn, JoffJoffDerluynDas, JoJoDasMedjdoub, FaridFaridMedjdoubDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysCheng, KaiKaiChengMertens, RobertRobertMertensGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15823Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°CProceedings paper