Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectors

Slassi, AmineAmineSlassiTavanti, FrancescoFrancescoTavantiClima, SergiuSergiuClimaGarbin, DanieleDanieleGarbinCalzolari, ArrigoArrigoCalzolari2025-02-232025-02-232025-APR 30169-4332WOS:001420716900001https://imec-publications.be/handle/20.500.12860/45241Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectorsJournal article10.1016/j.apsusc.2025.162455WOS:001420716900001ELECTRONIC-PROPERTIESTITANIUM NITRIDEWORK FUNCTIONDEPOSITIONSURFACEMEMORYBULKTIN