Browsing by author "Leonelli, Daniele"
Now showing items 1-20 of 35
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A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Iacopi, Francesca; De Gendt, Stefan; Verhulst, Anne; Heyns, Marc; Kunnen, Eddy; Nguyen, Duy; Demand, Marc; Ong, Patrick; Lee, Willie; Moonens, Jos; Richard, Olivier; Vandenberghe, William; Groeseneken, Guido (2009) -
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Hikavyy, Andriy; Devriendt, Katia; Demand, Marc; Loo, Roger; Groeseneken, Guido; Huyghebaert, Cedric (2013) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Design, fabrication and characterization of tunnel field effect transistors for ultra-low power CMOS
Leonelli, Daniele (2012-10) -
Drain voltage dependent analytical model of tunnel field-effect transistors
Verhulst, Anne; Leonelli, Daniele; Rooyackers, Rita; Groeseneken, Guido (2011) -
Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2011) -
Drive current improvement in Si tunnel field effect transistors by means of silicide engineering
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; Verhulst, Anne; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Electrical results of vertical Si N-tunnel FETs
Vandooren, Anne; Leonelli, Daniele; Rooyackers, Rita; Arstila, Kai; Groeseneken, Guido; Huyghebaert, Cedric (2011-09) -
Experimental analog performance of pTFETs as a function of temperature
Agopian, P.G.D.; Martino, M.D.V.; Martino, J.A.; Rooyackers, Rita; Leonelli, Daniele; Claeys, Cor (2012) -
Fabrication and analysis of a Si/Si0.55Ge0.45 hetero-junction line tunnel FET
Walke, Amey; Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Hikavyy, Andriy; Loo, Roger; Verhulst, Anne; Kao, Frank; Huyghebaert, Cedric; Groeseneken, Guido; Rao, V. Ramgopal; Bhuwalka, Krishna Kumar; Heyns, Marc; Collaert, Nadine; Thean, Aaron (2014) -
Fabrication and characterization of Si and hetero-junction tunnel field effect transistors
Claeys, Cor; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Heyns, Marc; Groeseneken, Guido; De Gendt, Stefan (2009) -
Ge and III/V devices on Si for advanced CMOS
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Leonelli, Daniele; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Rooyackers, Rita; Scarrozza, Marco; Simoen, Eddy; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne (2009) -
Hetero Ge/SI and Si1-xGex/Si nanowires for vertical microelectronics devices
Iacopi, Francesca; Rooyackers, Rita; Vandooren, Anne; Vanherle, Wendy; Takeuchi, Shotaro; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Leonelli, Daniele; Arstila, Kai; Bender, Hugo; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2009) -
High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Leonelli, Daniele; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne; Wang, Wei-E (2009) -
Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
Vandooren, Anne; Leonelli, Daniele; Rooyackers, Rita; Arstila, Kai; Groeseneken, Guido; Huyghebaert, Cedric (2012) -
Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor
Verhulst, Anne; Soree, Bart; Leonelli, Daniele; Vandenberghe, William; Groeseneken, Guido (2010) -
Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slope
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; Verhulst, Anne; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2009) -
Novel architecture to boost the vertical tunneling in tunnel field effect transistors
Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; Verhulst, Anne; Huyghebaert, Cedric; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2011) -
Observation of diameter dependent carrier distribution in nanowire-based transistors
Schulze, Andreas; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne; Rooyackers, Rita; Vandooren, Anne; Mody, Jay; Nazir, Aftab; Leonelli, Daniele; Vandervorst, Wilfried (2011)