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Publication Achieving 1ppm write-error rate in SOT-MRAM with synthetic antiferromagnetic free layer
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07Publication The critical role of 2D TMD interfacial layers for pFET performance
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07Publication Propelling Widespread GaN Electronics Adoption With Large Diameter and CMOS Fab-Friendly GaN-on-QST® Manufacturing Platform
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07Publication Unraveling BTI in IGZO devices: impact of device architecture, channel film deposition method and stoichiometry/phase, and device operating conditions
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07